Image sensors for distance measurement

ABSTRACT

An image sensor includes a semiconductor substrate including a first surface and a second surface and further includes a well region and a first floating diffusion region that are each adjacent to the first surface. The image sensor includes a first vertical transmission gate and a second vertical transmission gate isolated from direct contact with each other and each extend from the first surface of the semiconductor substrate and in a thickness direction of the semiconductor substrate through at least a portion of the well region. The image sensor includes a first storage gate between the first vertical transmission gate and the first floating diffusion region and on the first surface of the semiconductor substrate. The image sensor includes a first tap transmission gate between the first storage gate and the first floating diffusion region and on the first surface of the semiconductor substrate.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of Korean Patent Application No.10-2018-0156276, filed on Dec. 6, 2018, in the Korean IntellectualProperty Office, the disclosure of which is incorporated herein in itsentirety by reference.

BACKGROUND

The inventive concepts relates to image sensors, and more particularly,to image sensors for distance measurement.

Time-of-flight (ToF)-based image sensors may measure information about adistance from said image sensors to a subject to generate athree-dimensional (3D) image of the subject. ToF-based image sensors mayirradiate light onto a subject, and then, may measure the ToF takenuntil light reflected from the subject is received, thereby obtaininginformation about a distance.

SUMMARY

The inventive concepts provide an image sensor for distance measurement,which enables a pixel to be miniaturized and reduces read noise.

According to some example embodiments, an image sensor may include asemiconductor substrate including a first surface and a second surface.The semiconductor substrate may further include a well region and afirst floating diffusion region. Each of the well region and the firstfloating diffusion may be adjacent to the first surface. The imagesensor may include a first vertical transmission gate and a secondvertical transmission gate isolated from direct contact with each other.The first vertical transmission gate and the second verticaltransmission gate may each extend from the first surface of thesemiconductor substrate and in a thickness direction of thesemiconductor substrate through at least a portion of the well region.The thickness direction may be perpendicular to at least one of thefirst surface and the second surface. The image sensor may include afirst storage gate between the first vertical transmission gate and thefirst floating diffusion region. The first storage gate may be on thefirst surface of the semiconductor substrate. The image sensor mayinclude a first tap transmission gate between the first storage gate andthe first floating diffusion region. The first tap transmission gate maybe on the first surface of the semiconductor substrate.

According to some example embodiments, an image sensor may include asemiconductor substrate including a first surface and a second surface.The semiconductor substrate may further include a demodulation region.The image sensor may include a first vertical transmission gate and asecond vertical transmission gate isolated from direct contact with eachother. The demodulation region may be between the first verticaltransmission gate and the second vertical transmission gate. The firstvertical transmission gate and the second vertical transmission gate mayeach extend in a thickness direction of the semiconductor substrate fromthe first surface of the semiconductor substrate. The thicknessdirection may be perpendicular to at least one of the first surface andthe second surface. The image sensor may include a first storage gateand a second storage gate on the first surface of the semiconductorsubstrate. The first storage gate may be adjacent to the first verticaltransmission gate. The second storage gate may be adjacent to the secondvertical transmission gate. The image sensor may include a first taptransmission gate and a second tap transmission gate on the firstsurface of the semiconductor substrate. The first tap transmission gatemay be adjacent to the first storage gate. The second tap transmissiongate may be adjacent to the second storage gate.

According to some example embodiments, an image sensor may include asemiconductor substrate including a first surface and a second surface.The semiconductor substrate may further include a demodulation regionand a first floating diffusion region. The semiconductor substrate maybe associated with a first conductivity type. The image sensor mayinclude a first vertical transmission gate and a second verticaltransmission gate isolated from direct contact with each other. Thedemodulation region may be between the first vertical transmission gateand the second vertical transmission gate. The first verticaltransmission gate and the second vertical transmission gate may eachextend in a thickness direction of the semiconductor substrate from thefirst surface of the semiconductor substrate. The thickness directionmay be perpendicular to at least one of the first surface and the secondsurface. The image sensor may include a first storage gate between thefirst vertical transmission gate and the first floating diffusionregion. The first storage gate may be on the first surface of thesemiconductor substrate. The image sensor may include a first taptransmission gate between the first storage gate and the first floatingdiffusion region. The first tap transmission gate may be on the firstsurface of the semiconductor substrate. The image sensor may include astorage diffusion region in an inner portion of the semiconductorsubstrate. The storage diffusion region may be on the first storagegate. The storage diffusion region may be associated with a secondconductivity type. The second conductivity type may be different fromthe first conductivity type.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments of the inventive concepts will be more clearlyunderstood from the following detailed description taken in conjunctionwith the accompanying drawings in which:

FIG. 1 is a block diagram of a system according to some exampleembodiments;

FIG. 2 is a block diagram for describing an operation of a systemaccording to some example embodiments;

FIG. 3 is an equivalent circuit diagram corresponding to a unit pixel ofan image sensor according to some example embodiments;

FIG. 4 is a plan view of a main portion of a unit pixel of an imagesensor according to some example embodiments;

FIG. 5 is a cross-sectional view of a main portion of a unit pixel of animage sensor;

FIG. 6 is a timing diagram for describing an operation of an imagesensor for distance measurement, according to some example embodiments;

FIG. 7 is a plan view of a pixel array of an image sensor according tosome example embodiments;

FIGS. 8 and 9 are plan views of a pixel array for describing anoperation of an image sensor for distance measurement, according to someexample embodiments;

FIG. 10 is an equivalent circuit diagram corresponding to a unit pixelof an image sensor according to some example embodiments;

FIG. 11 is a plan view of a main portion of a unit pixel of an imagesensor according to some example embodiments;

FIG. 12 is a cross-sectional view of a main portion of a unit pixel ofan image sensor according to some example embodiments;

FIG. 13 is a timing diagram for describing an operation of an imagesensor for distance measurement, according to some example embodiments;

FIG. 14 is a plan view of a pixel array of an image sensor according tosome example embodiments;

FIG. 15 is a plan view of a pixel array for describing an operation ofan image sensor for distance measurement, according to some exampleembodiments;

FIG. 16 is an equivalent circuit diagram corresponding to a unit pixelof an image sensor according to some example embodiments;

FIG. 17 is a plan view of a main portion of a unit pixel of an imagesensor according to some example embodiments;

FIG. 18 is a cross-sectional view of a main portion of a unit pixel ofan image sensor according to some example embodiments;

FIG. 19 is a cross-sectional view of a main portion of a unit pixel ofan image sensor according to some example embodiments;

FIG. 20 is a cross-sectional view of a main portion of a unit pixel ofan image sensor according to some example embodiments;

FIG. 21 is a cross-sectional view of a main portion of a unit pixel ofan image sensor according to some example embodiments;

FIG. 22 is a cross-sectional view of a main portion of a unit pixel ofan image sensor according to some example embodiments;

FIG. 23 is an equivalent circuit diagram corresponding to a unit pixelof an image sensor according to some example embodiments;

FIG. 24 is a plan view of a main portion of a unit pixel of an imagesensor according to some example embodiments; and

FIG. 25 is a cross-sectional view of a main portion of a unit pixel ofan image sensor according to some example embodiments.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, example embodiments will be described in detail withreference to the accompanying drawings. Herein, like reference numeralsrefer to like elements, and their repetitive descriptions will beomitted.

FIG. 1 is a block diagram of a system 15 according to some exampleembodiments.

Referring to FIG. 1, the system 15 may include an imaging device 17,which is connected to a processor 19 or a host to communicate with theprocessor 19 or the host. The system 15 may further include a memory 20,which is connected to the processor 19 and stores information such asimage data received from the imaging device 17. In some exampleembodiments, the system 15 may be integrated into one semiconductorchip. In other embodiments, each of the imaging device 17, the processor19, and the memory 20 may be implemented as a separate semiconductorchip. In some embodiments, the memory 20 may include one or more memorychips. In some embodiments, the processor 19 may includemulti-processing chips.

The system 15 may be a low power electronic device for an application ofan image sensor for distance measurement. The system 15 may be aportable type or a stationary type. Examples of the portable type of thesystem 15 may include mobile devices, cellular phones, smartphones, userequipment (UE), tablet personal computers (PCs), digital cameras, laptopor desktop computers, electronic smartwatches, machine-to-machine (M2M)communication devices, virtual reality (VR) devices or modules, robots,etc. Examples of the stationary type of the system 15 may include gameconsoles of video game arcades, interactive video terminals, vehicles,machine vision systems, industrial robots, VR devices, cameras mountedon a driver side in vehicles, etc.

In some embodiments, the imaging device 17 may include a light source 22and an image sensor 24. The light source 22 may include, for example, alaser diode (LD) or a light-emitting diode (LED) which each emitsinfrared (IR) light or visible light, a near-infrared (NIR) laser, apoint light source, a white lamp, a monochromatic illumination sourceconfigured by a combination of a white lamp and a monochromator, or acombination of other laser sources. In some embodiments, the lightsource 22 may emit IR light having a wavelength of about 800 nm to about1,000 nm. The image sensor 24 may include a pixel array and auxiliaryprocessing circuits each described below and illustrated in FIG. 2.

For example, the processor 19 may be a central processing unit (CPU)which is a general-purpose processor. Herein, for convenience ofdescription, a CPU may be referred to as a processor. In someembodiments, the processor 19 may further include a microcontroller, adigital signal processor (DSP), a graphics processing unit (GPU), and anapplication specific integrated circuit (ASIC) processor, in addition tothe CPU. Also, the processor 19 may include one or more CPUs whichoperate in a distributed processing environment. For example, theprocessor 19 may be a system on chip (SoC) having additional functions,in addition to a function of the CPU.

The memory 20 may include, for example, dynamic random access memory(DRAM) such as synchronous DRAM (SDRAM), a high bandwidth memory (HBM)module, or a DRAM-based three-dimensional stack (3DS) module such as ahybrid memory cube (HMC) memory. The memory 20 may include, for example,a solid state drive (SSD), a DRAM module, or a semiconductor-basedstorage such as static random access memory (SRAM), phase change randomaccess memory (PRAM), resistive random access memory (RRAM), conductivebridging random access memory (CBRAM), magnetic random access memory(MRAM), or spin-transfer torque MRAM (STT-MRAM).

FIG. 2 is a block diagram for describing an operation of the system 15according to some example embodiments.

Referring to FIG. 2, the system 15 may be used to obtain Z-axis depthinformation about a three-dimensional (3D) object 26 which may be anindividual object or an object in a scene (not shown). In someembodiments, the depth information may be calculated by the processor19, based on scan data received from the image sensor 24, or may beautonomously calculated by the image sensor 24. In some embodiments, thedepth information may be used as a portion of a 3D user interface by theprocessor 19 and may enable a user of the system 15 to interact with a3D image of the 3D object 26 or use the 3D image of the 3D object 26 asa portion of another application executed by the system 15.

An X axis may be a horizontal direction corresponding to a front regionin front of the system 15, a Y axis may be a vertical directiondeviating from a page, and the Z axis may extend in a direction from thesystem 15 to the 3D object 26. An optical axis of the light source 22and an optical axis of the image sensor 24 may be parallel to the Zaxis, for depth measurement.

The light source 22 may illuminate the 3D object 26 as illustrated byarrows 28 and 29. The arrows 28 and 29 may respectively correspond todashed lines 30 and 31 representing a path of an optical beam or anoptical emission. The optical beam or the optical emission may be usedto point-scan the 3D object 26 within an optical viewing angle.Line-unit scan performed on an object surface may be performed by anoptical emission source which may be a light-emitting device 33 operatedand controlled by a light controller 34. An optical beam from thelight-emitting device 33 may be point-scanned in an X-Y direction over asurface of the 3D object 26 through a projection lens 35, based oncontrol by the light controller 34. In some embodiments, a point-scanoperation may project light spots onto a surface of a 3D object along ascan line. The projection lens 35 may be a cylindrical optical devicewhich concentrates a laser beam, irradiated from a concentration lens orthe light-emitting device 33, on one spot of a surface of the 3D object26. For example, the projection lens 35 may be a concentration lenshaving a convex structure, but is not limited thereto. An appropriatelens design of another type may be selected for the projection lens 35.The 3D object 26 may be disposed at a focal position at which lightirradiated from the light-emitting device 33 is concentrated on a lightspot by the projection lens 35. Therefore, in the point-scan operation,a spot or a narrow region of the surface of the 3D object 26 may besequentially illuminated by an optical beam concentrated from theprojection lens 35.

In some embodiments, the light-emitting device 33 may include an LD oran LED which each emits IR light or visible light, an NIR laser, a pointlight source, a white lamp, a monochromatic illumination sourceconfigured by a combination of a white lamp and a monochromator, or acombination of other laser sources. The light-emitting device 33 may befixed at a position of a housing of the system 15 and may rotate in theX-Y direction. The light-emitting device 33 may be controlled in the X-Ydirection by the light controller 34 and may perform a point-scanoperation on the 3D object 26. In some embodiments, visible light may begreen light. Light emitted from the light-emitting device 33 may beirradiated onto the surface of the 3D object 26 by using a mirror (notshown). Alternatively, point-scan may be performed without a mirror.

Light reflected through point-scanning of the 3D object 26 may travelalong a collection path illustrated by each of arrows 36 and 37 anddashed lines 38 and 39. As light irradiated from the light-emittingdevice 33 is received, photons scattered by or reflected from thesurface of the 3D object 26 may move through a light collection path. InFIG. 2, various paths illustrated by arrows and dashed lines are merelyan example. A detailed path through which a real light signal istransferred is not limited to the illustrated paths.

Light received from the illuminated 3D object 26 may concentrate on oneor more pixels of a two-dimensional (2D) pixel array 42 through acollection lens 44 of the image sensor 24. Similarly to the projectionlens 35, the collection lens 44 may be another cylindrical opticaldevice or a collection lens of a glass or plastic surface whichconcentrates reflection light, received from the 3D object 26, on one ormore pixels of the 2D pixel array 42. In some embodiments, thecollection lens 44 may be a concentration lens having a convexstructure, but is not limited thereto. Also, for convenience ofdescription, a 3×3 pixel array is illustrated in FIG. 2, but it may beunderstood that a current pixel array includes thousands or millions ofpixels. The 2D pixel array 42 may be a red, green, and blue (RGB) pixelarray where different pixels collect light signals of different colors.The 2D pixel array 42 may include, for example, a 2D sensor such as a 2DRGB sensor, a 2D IR sensor, a 2D NIR sensor, a 2D RGBW sensor, or a 2DRGB-IR sensor each including an IR blocking filter. The system 15 mayuse the same pixel array 42 for imaging of 2D RGB colors (or a sceneincluding an object) of the 3D object 26, in addition to 3D imaging(including depth measurement) of the 3D object 26.

The 2D pixel array 42 may convert received photons into electricalsignals corresponding thereto, and the electrical signals may beprocessed by a pixel array controller 46, whereby a 3D depth image ofthe 3D object 26 may be determined. For example, the pixel arraycontroller 46 may combine and calculate phase information, for depthmeasurement. The pixel array controller 46 may include a plurality ofassociation circuits for controlling an operation of the 2D pixel array42.

The processor 19 may control operations of the light source 22 and theimage sensor 24. For example, the system 15 may include a mode switch(not shown) which is controlled by a user and switches a 2D imaging modeor a 3D imaging mode. When the user selects the 2D imaging mode by usingthe mode switch, the processor 19 may activate the image sensor 24, andthe 2D imaging mode may use peripheral light, whereby the processor 19may not activate the light source 22. On the other hand, when the userselects the 3D imaging mode by using the mode switch, the processor 19may activate the light source 22 and the image sensor 24 and may triggera variation of a level of a reset signal in the pixel array controller46, and thus, when the peripheral light is too strong and thus is notreflected in a linear mode, the processor 19 may switch from the linearmode to a logarithm mode. Processed image data received from the pixelarray controller 46 may be stored in the memory 20 by the processor 19.The processor 19 may display a 2D or 3D image, selected by the user, ona display screen (not shown) of the system 15. The processor 19 may beprogrammed with software or firmware which each performs variousprocessing operations described. In some embodiments, the processor 19may include programmable hardware logic circuits for performing some orall of the above-described functions. For example, the memory 20 maystore program code, a lookup table, or intermediate operation results toallow the processor 19 to perform a corresponding function.

The processor 19 of the system 15 may perform 1D point-scanning of the3D object 26 along a scan line by using the light source 22. In aportion of a point-scan operation, the light source 22 may be controlledby the processor 19 to project sequential light spots (or serial lightspots) on the surface of the 3D object 26 by units of lines. The pixelarray controller 46 of the system 15 may select pixels of one row in animage sensor such as the 2D pixel array 42. The image sensor such as the2D pixel array 42 may include a plurality of pixels arranged in a 2Darray configuring an image plane. A row from which pixels are selectedmay configure an epipolar line of the scan line in the image plane. Thepixel array controller 46 may be controlled by the processor 19 todetect each light spot by using a corresponding pixel of pixels of onerow. When light reflected from an illumination light spot isconcentrated on two or more adjacent pixels by the collection lens 44,light reflected from the illumination light spot may be detected by asingle pixel or one or more pixels. The pixel array controller 46 may becontrolled by the processor 19 to generate a pixel specific output, inresponse to pixel specific detection of a corresponding light spot ofsequential light spots. Therefore, the pixel array controller 46 maydetermine a 3D distance (or a depth) to a corresponding light spot ofthe surface of the 3D object 26, at least based on a pixel specificoutput and a scan angle used by the light source 22 which projects acorresponding light spot.

FIG. 3 is an equivalent circuit diagram corresponding to a unit pixel ofan image sensor 100 according to some example embodiments. FIG. 4 is aplan view of a main portion of a unit pixel of the image sensor 100according to some example embodiments. FIG. 5 is a cross-sectional viewof a main portion of a unit pixel of the image sensor 100.

Referring to FIGS. 3 to 5, the image sensor 100 may have a 2-tap pixelstructure. The 2-tap pixel structure may denote a structure where onepixel of the image sensor 100 includes two taps. Here, a tap may denotea unit component for transferring, by units of phases, photochargeswhich are generated and accumulated in a pixel by irradiating externallight. The image sensor 100 may implement a manner of transmittingphotocharges with respect to a 0-degree phase and a 180-degree phase andwith respect to a 90-degree phase and a 270-degree phase by using twotaps. For example, one pixel of the image sensor 100 may include a firsttap part TAP1 a second tap part TAP2. The first tap part TAP1 may be apart configured to transmit photocharges with respect to a 0-degreephase, and the second tap part TAP2 may be a part configured to transmitphotocharges with respect to a 180-degree phase. Alternatively, thefirst tap part TAP1 may be a part configured to transmit photochargeswith respect to a 90-degree phase, and the second tap part TAP2 may be apart configured to transmit photocharges with respect to a 270-degreephase.

The image sensor 100 may include a semiconductor substrate 110 thatincludes first and second surfaces 110F and 110B which are opposite toeach other. The semiconductor substrate 110 may include a well region120 adjacent to the first surface 110F and a separate region 112adjacent to the second surface 110B, a photoelectric conversion region130 disposed in the semiconductor substrate 110 between the well region120 and the second surface 110B, first and second vertical transmissiongates 144 and 154 which are spaced apart from each other (“isolated fromdirect contact with each other”) and each extend from the first surface110F in a thickness direction of the semiconductor substrate 110, whichis a direction vertical to (“perpendicular to”) at least one surface ofthe first and second surfaces 110F and 110B, to pass (“extend”) throughat least a portion of the well region 120, and a wiring structure 170disposed on the first surface 110F of the semiconductor substrate 110.

The semiconductor substrate 110 may include, for example, at least oneof silicon (Si), germanium (Ge), silicon germanium (SiGe), siliconcarbon (SiC), gallium arsenic (GaAs), indium arsenic (InAs), and indiumphosphorus (InP). In some embodiments, the semiconductor substrate 110may be of (“may be associated with”) a first conductivity type. Forexample, the first conductivity type may be a p type.

The well region 120 may be of, for example, the first conductivity type.The well region 120 may be formed by doping the semiconductor substrate110 with impurities of the first conductivity type. For example, thefirst conductivity type may be a p type. An impurity concentration ofthe well region 120 may have a value which is higher than that of animpurity concentration of a portion, other than the well region 120, ofthe semiconductor substrate 110.

The photoelectric conversion region 130 may be of a second conductivitytype. For example, the second conductivity type may be an n type. Thephotoelectric conversion region 130 may be configured with a photodiode(PD). The photoelectric conversion region 130 may be referred to as an Ntype-photodiode (N-PD). The photoelectric conversion region 130 mayoverlap the first and second vertical transmission gates 144 and 154 inthe thickness direction (i.e., a direction vertical to at least one ofthe first surface 110F and the second surface 110B) of the semiconductorsubstrate 110.

Each of the first and second vertical transmission gates 144 and 154 mayextend to have a length of about 50 nm to about 500 nm in the thicknessdirection of the semiconductor substrate 110. In some embodiments, athickness of the well region 120 may be similar to an extension lengthof each of the first and second vertical transmission gates 144 and 154.In some embodiments, the first and second vertical transmission gates144 and 154 may extend in the thickness direction of the semiconductorsubstrate 110 to completely pass through the well region 120.

In some example embodiments, the semiconductor substrate 110 may includea demodulation region 122. The well region 120 may include ademodulation region 122. The demodulation region 122 of the well region120 may be a region where photocharges generated in the photoelectricconversion region 130 move through the first and second verticaltransmission gates 144 and 154. The demodulation region 122 may includea portion, which is disposed between the first and second verticaltransmission gates 144 and 154 spaced apart from each other, of the wellregion 120, and moreover, may include a portion (for example, a portion,which is adjacent to a side surface opposite to each of side surfaces ofthe first and second vertical transmission gates 144 and 154 facing eachother), which is adjacent to the first and second vertical transmissiongates 144 and 154 to surround the first and second vertical transmissiongates 144 and 154, of the well region 120. In some example embodiments,the demodulation region 122 may be of the first conductivity type.

A plurality of transmission gate insulation layers, for example, firstand second transmission gate insulation layers 142 and 152, forinsulating the well region 120 from the first and second verticaltransmission gates 144 and 154 may be disposed near the first and secondvertical transmission gates 144 and 154. The first vertical transmissiongate 144 and the first transmission gate insulation layer 142surrounding the first vertical transmission gate 144 may be referred toas a first transmission gate structure 140, and the second verticaltransmission gate 154 and the second transmission gate insulation layer152 surrounding the second vertical transmission gate 154 may bereferred to as a second transmission gate structure 150. A firstmodulation voltage Vmod1 and a second modulation voltage Vmod2 may berespectively connected to the first vertical transmission gate 144 andthe second vertical transmission gate 154. The first verticaltransmission gate 144 and the second vertical transmission gate 154 mayrespectively configure a first transmission transistor TS1 and a secondtransmission transistor TS2.

The photoelectric conversion region 130 may overlap the demodulationregion 122 in the thickness direction of the semiconductor substrate110. Also, the photoelectric conversion region 130 may overlap both thefirst transmission gate structure 140 and the second transmission gatestructure 150 in the thickness direction of the semiconductor substrate110. The photoelectric conversion region 130 may be provided to have awidth which is wider than the demodulation region 122 and may overlapthe demodulation region 122, and thus, photocharges generated in thephotoelectric conversion region 130 may concentrate and may betransferred to the demodulation region 122.

As shown in at least FIG. 5, a gate insulation layer 160 may be on thefirst surface 110F of the semiconductor substrate 110. The gateinsulation layer 160 may cover a whole region, other than positions atwhich the first and second transmission gate structures 140 and 150 aredisposed, of the first surface 110F, but is not limited thereto.

The wiring structure 170 may be disposed on the gate insulation layer160. The wiring structure 170 may include a first storage gate (SG1)172, a second storage gate (SG2) 174, a first tap transmission gateTGX1, a second tap transmission gate TGX2, a wiring, a contact plug, andan interlayer insulation layer. Here, the wiring, the contact plug, andthe interlayer insulation layer may configure association circuits.

The first storage gate (SG1) 172 may be on the first surface 110F, andthe second storage gate (SG2) 174 may be on the first surface 110F. Thefirst storage gate (SG1) 172 may be disposed next to the first verticaltransmission gate (TG1) 144 and the first storage gate (SG1) 172 may beon the gate insulation layer 160, such that, as shown in at least FIGS.4-5, the first storage gate (SG1) 172 may be adjacent to the firstvertical transmission gate (TG1) and the second storage gate (SG2) 174may be adjacent to the second vertical transmission gate (TG2) 154. Thesecond storage gate (SG2) 174 may be disposed next to the secondvertical transmission gate (TG2) 154 and the second storage gate (SG2)174 may be on the gate insulation layer 160. For example, in a planview, the first vertical transmission gate (TG1) 144 and the secondvertical transmission gate (TG2) 154 may be disposed apart from eachother (“isolated from direct contact with each other”) with thedemodulation region 122 therebetween in a direction extending parallelto the first surface 110F such that the demodulation region 122 isunderstood to be between the first vertical transmission gate (TG1) 144and the second vertical transmission gate (TG2) 154, the first storagegate (SG1) 172 may be disposed on one side of the first verticaltransmission gate (TG1) 144, and the second storage gate (SG2) 174 maybe disposed on one side of the second vertical transmission gate (TG2)154. Therefore, in a plan view, the first vertical transmission gate(TG1) 144 and the second vertical transmission gate (TG2) 154 may bedisposed apart from each other between the first storage gate (SG1) 172and the second storage gate (SG2) 174. As shown in at least FIG. 4, thefirst storage gate (SG1) 172 may be between the first verticaltransmission gate (TG1) 144 and the first floating diffusion region FD1.As shown in at least FIG. 4, the second storage gate (SG2) 174 may bebetween the second vertical transmission gate (TG2) 154 and the secondfloating diffusion region FD2.

The first storage gate (SG1) 172 and the second storage gate (SG2) 174may respectively configure a first storage transistor SS1 and a secondstorage transistor SS2, and as illustrated in FIG. 3, the first storagetransistor SS1 may be connected to the first transmission transistor TS1without another transistor therebetween, and the second storagetransistor SS2 may be connected to the second transmission transistorTS2 without another transistor therebetween.

A barrier impurity region 176 disposed apart from the first surface 110F(e.g., isolated from direct contact with the first surface 110F) may bedisposed in the semiconductor substrate 110 on (e.g., “under”) the firststorage gate (SG1) 172 and the second storage gate (SG2) 174. Thebarrier impurity region 176 may be of (“may be associated with”) thefirst conductivity type.

A first charge storage region 1721 and a second charge storage region1741 may be disposed in the semiconductor substrate 110 under the firststorage gate (SG1) 172 and the second storage gate (SG2) 174. Forexample, the first charge storage region 1721 may be disposed betweenthe first surface 110F and the barrier impurity region 176 at a positionvertically overlapping the first storage gate (SG1) 172, and the secondcharge storage region 1741 may be disposed between the first surface110F and the barrier impurity region 176 at a position verticallyoverlapping the second storage gate (SG2) 174. The first charge storageregion 1721 and the second charge storage region 1741 may each be atemporary charge storage region which temporarily stores photochargesgenerated in the photoelectric conversion region 130 before beingtransferred to floating diffusion regions FD1 and FD2 after beingtransferred to the demodulation region 122.

The first storage gate (SG1) 172 and the second storage gate (SG2) 174may be disposed on the first surface 110F of the semiconductor substrate110 with the gate insulation layer 160 therebetween, and for example, abottom surface 172B of the first storage gate (SG1) 172 may be higher inlevel than (e.g., distal to the second surface 110B in relation to) thefirst surface 110F of the semiconductor substrate 110. Also, in a planview, an area of each of the first storage gate (SG1) 172 and the secondstorage gate (SG2) 174 may be greater than that of each of the firstvertical transmission gate (TG1) 144 and the second verticaltransmission gate (TG2) 154. For example, each of the first verticaltransmission gate (TG1) 144 and the second vertical transmission gate(TG2) 154 may have a vertical gate structure which is disposed in arecess (not shown) extending in the thickness direction of thesemiconductor substrate 110 from the first surface 110F of thesemiconductor substrate 110, and thus, in a unit pixel, an area occupiedby the first vertical transmission gate (TG1) 144 and the secondvertical transmission gate (TG2) 154 may be reduced, whereby each of thefirst storage gate (SG1) 172 and the second storage gate (SG2) 174 mayhave a relatively large surface area SG1_A and SG2_A, respectively,along a surface extending parallel to the first surface 110F. Forexample, as shown in FIG. 4, the surface area SG1_A of the first storagegate (SG1) 172 along a surface extending parallel to the first surface110F may be greater than the surface area TG1_A of the first verticaltransmission gate (TG1) 144 along a surface extending parallel to thefirst surface 110F. In another example, as shown in FIG. 4, the surfacearea SG2_A of the second storage gate (SG2) 174 along a surfaceextending parallel to the first surface 110F may be greater than thesurface area TG2_A of the second vertical transmission gate (TG2) 154along a surface extending parallel to the first surface 110F.

It will be understood that an element that is described to be “on”another element herein may be “above” or “under” the other element andmay be “directly on” the other element so as to be in direct contactwith the other element or may be “indirectly on” the other element so asto be isolated from direct contact with the other element by one or moreinterposing structures and/or spaces.

The first tap transmission gate TGX1 may be disposed on the gateinsulation layer 160 at one side of the first storage gate (SG1) 172,such that the first tap transmission gate TGX1 is on the first surface110F. The first floating diffusion region FD1 may be included in thesemiconductor substrate 110 and may be adjacent to the first surface110F, as shown in at least FIG. 5. As shown in at least FIG. 4, thefirst tap transmission gate TGX1 may be adjacent to the first storagegate (SG1) 172. The first floating diffusion region FD1 may be disposedat a position adjacent to the first surface 110F and the first taptransmission gate TGX1 in the well region 120 of the semiconductorsubstrate 110. That is, in a plan view, the first tap transmission gateTGX1 may be disposed between the first floating diffusion region FD1 andthe first storage gate (SG1) 172. The first tap transmission gate TGX1may configure a first tap transmission transistor TXS1 for transferringphotocharges, temporarily stored in the first charge storage region 1721under the first storage gate (SG1) 172, to the first floating diffusionregion FD1. Restated, the image sensor 100 may include a first taptransmission transistor TXS1 that is configured to transfer aphotocharge, that is stored in the first charge storage region 1721 on(e.g., “under”) the first storage gate (SG1) 172, to the first floatingdiffusion region FD1, where the first tap transmission transistor TXS1includes the first tap transmission gate TGX1. Restated, the first taptransmission gate TGX1 may be a transistor gate of the first taptransmission transistor TXS1.

The second tap transmission gate TGX2 may be disposed on the gateinsulation layer 160 at one side of the second storage gate (SG2) 174,such that the second tap transmission gate TGX2 is on the first surface110F. As shown in at least FIG. 4, the second tap transmission gate TGX2may be adjacent to the second storage gate (SG2) 174. The secondfloating diffusion region FD2 may be included in the semiconductorsubstrate 110 and may be adjacent to the first surface 110F, as shown inat least FIG. 5. The second storage gate (SG2) 174 may be between thesecond vertical transmission gate (TG2) 154 and the second floatingdiffusion region FD2. The second floating diffusion region FD2 may bedisposed at a position adjacent to the first surface 110F and the secondtap transmission gate TGX2 in the well region 120 of the semiconductorsubstrate 110. That is, in a plan view, the second tap transmission gateTGX2 may be disposed between the second floating diffusion region FD2and the second storage gate (SG2) 174. The second tap transmission gateTGX2 may configure a second tap transmission transistor TXS2 fortransferring photocharges, temporarily stored in the second chargestorage region 1741 under the second storage gate (SG2) 174, to thesecond floating diffusion region FD2.

The first floating diffusion region FD1 and the second floatingdiffusion region FD2 may be respectively connected to a first reset gateRG1 and a second reset gate RG2. The first reset gate RG1 and the secondreset gate RG2 may respectively configure a first reset transistor RS1and a second reset transistor RS2. A drain of each of the first resetgate RG1 and the second reset gate RG2 may be connected to a Vddvoltage. Also, a source and a drain of a first source followertransistor SF1 may be respectively connected to a source of a firstselection transistor SEL1 and the Vdd voltage. A first output voltageVout1 may be output to a drain of the first selection transistor SELL Asource and a drain of a second source follower transistor SF2 may berespectively connected to a source of a second selection transistor SEL2and the Vdd voltage. A second output voltage Vout2 may be output to adrain of the second selection transistor SEL2. A source of each of thefirst and second source follower transistors SF1 and SF2 and the firstand second selection transistors SEL1 and SEL2 may be a regionillustrated by N+.

As shown in at least FIG. 4, an overflow gate OG may be disposed on thefirst surface 110F of the semiconductor substrate 110. A source of theoverflow gate OG may be connected to one side of the demodulation region122, and a drain of the overflow gate OG may be connected to the Vddvoltage. The overflow gate OG may be provided for discharging andremoving an overflow charge. For example, the image sensor 100 may readand output a light signal, based on a global shutter manner. Forexample, the global shutter manner may use a manner of simultaneouslyresetting all pixels of the image sensor 100, accumulating lightsignals, and sequentially reading pixel information by units of rows.The overflow charge may occur due to undesired external light in aprocess of reading and outputting a light signal, and the overflowcharge may be discharged and removed by the overflow gate OG.

The image sensor 100 may further include a micro-lens 186 disposed onthe second surface 110B of the semiconductor substrate 110. The secondsurface 110B of the semiconductor substrate 110 may be a light incidentsurface. At least one of a negative fixed charge layer 182 and anantireflection layer 184 may be disposed between the second surface 110Bof the semiconductor substrate 110 and the micro-lens 186. In someembodiments, the negative fixed charge layer 182, the antireflectionlayer 184, and the micro-lens 186 may be stacked and disposed on thesecond surface 110B of the semiconductor substrate 110. In someembodiments, the negative fixed charge layer 182 may directly contactthe second surface 110B of the semiconductor substrate 110 and may coverthe second surface 110B of the semiconductor substrate 110. In someembodiments, a buffer layer or a color filter layer (not shown) may befurther disposed between the micro-lens 186 and the antireflection layer184. The negative fixed charge layer 182 may include, for example, ahigh-k dielectric material such as hafnium oxide (HfO_(x)), aluminumoxide (AlO_(x)), or zirconium oxide (ZrO_(x)). The antireflection layer184 may include, for example, SiON, SiC, SIGN, or SiCO.

Generally, a time-of-flight (ToF)-based image sensor may be configuredby serially arranging a plurality of gates including a photogate, afirst tap transmission gate, a storage gate, and a second taptransmission gate on each pixel, for implementing an accurate correlateddouble sampling (CDS) operation to minimize read noise. However, it isdifficult to decrease an area occupied by the plurality of gates, anddue to this, it is difficult to miniaturize each pixel of the imagesensor.

However, the image sensor 100 according to some example embodiments mayinclude the first and second vertical transmission gates 144 and 154,the first storage gate SG1 and the first tap transmission gate TGX1 maybe sequentially disposed next to the first vertical transmission gate144, and the second storage gate SG2 and the second tap transmissiongate TGX2 may be sequentially disposed next to the second verticaltransmission gate 154. As shown in at least FIG. 4, the first taptransmission gate TGX1 may be between the first storage gate (SG1) 172and the first floating diffusion region FD1. As shown in at least FIG.4, the second tap transmission gate TGX2 may be between the secondstorage gate (SG2) 174 and the second floating diffusion region FD2.Therefore, the first vertical transmission gate (TG1) 144 of the firsttransmission transistor TS1 and the second vertical transmission gate(TG2) 154 of the second transmission transistor TS2 may be providedrelatively long, and an area of each of the first and second storagegates SG1 and SG2 may be provided relatively large. Accordingly, eachpixel configuring the image sensor 100 may be miniaturized, a chargestorage capacity may increase, and read noise may be minimized.

FIG. 6 is a timing diagram for describing an operation of an imagesensor for distance measurement, according to some example embodiments.FIG. 7 is a plan view of a pixel array of an image sensor according tosome example embodiments. FIGS. 8 and 9 are plan views of a pixel arrayfor describing an operation of an image sensor for distance measurement,according to some example embodiments.

Referring to FIG. 6, output light from a light source (22 of FIG. 2) andreflection light which is reflected by a 3D object (26 of FIG. 2) andreceived by an image sensor (100 of FIG. 3) may have a delay time Td.The output light may be a pulse light signal based on a pulse voltage.In some embodiments, the pulse light signal may have a frequency ofabout 10 MHz to about 100 MHz.

A first modulation voltage Vmod1 applied to a first verticaltransmission gate (TG1 of FIG. 3) may be a pulse voltage synchronizedwith the pulse light signal. A second modulation voltage Vmod2 appliedto a second vertical transmission gate (TG2 of FIG. 3) may be a pulsevoltage having a phase difference with the pulse light signal. In someembodiments, the phase difference may be about 180 degrees.

As a difference T1-T2 between a time T1 for which a pulse signal of thereflection light overlaps a pulse voltage of the first verticaltransmission gate TG1 and a time T2 for which the pulse signal of thereflection light overlaps a pulse voltage of the second verticaltransmission gate TG2 increases, a measured distance may be shortlyshown. A first output voltage Vout1 may be generated for the time T1 forwhich the pulse signal of the reflection light overlaps the pulsevoltage of the first vertical transmission gate TG1, and a second outputvoltage Vout2 may be generated for the time T2 for which the pulsesignal of the reflection light overlaps the pulse voltage of the secondvertical transmission gate TG2. Therefore, a difference between thefirst output voltage Vout1 and the second output voltage Vout2 may beanalyzed by, for example, a 2-phase algorithm, and thus, a distancebetween the image sensor 100 and the 3D object 26 may be determined. Thefirst output voltage Vout1 and the second output voltage Vout2 may berepresented by a sum of a plurality of reflection light pulse signals aswell as a single reflection light pulse signal.

In some embodiments, a 4-phase algorithm may analyze a first outputvoltage Vout1 and a second output voltage Vout2 each obtained byapplying, as the first and second modulation voltages Vmod1 and Vmod2, apulse voltage synchronized with the pulse light signal and a pulsevoltage having a 180-degree phase difference with the pulse light signaland a first output voltage Vout1 and a second output voltage Vout2 eachobtained by applying, as the first and second modulation voltages Vmod1and Vmod2, pulse voltages having a 90-degree phase difference and a270-degree phase difference with the pulse light signal, and thus, thedistance between the image sensor 100 and the 3D object 26 may bedetermined.

Referring to FIGS. 7 and 8, reflection light having a 0-degree phase andreflection light having a 180-degree phase may be collected in a firstpixel PIXEL1, and reflection light having a 90-degree phase andreflection light having a 270-degree phase may be collected in a thirdpixel PIXEL3. For example, a first modulation voltage (Vmod1 of FIG. 6)of the first pixel PIXEL1 may be a pulse voltage synchronized with apulse light signal, and a second modulation voltage (Vmod2 of FIG. 6) ofthe first pixel PIXEL1 may be a pulse voltage having a 180-degree phasedifference with the pulse light signal. Also, a first modulation voltageVmod1 of the third pixel PIXEL3 may be a pulse voltage having a90-degree phase difference with the pulse light signal, and a secondmodulation voltage Vmod2 of the third pixel PIXEL3 may be a pulsevoltage having a 270-degree phase difference with the pulse lightsignal. In this case, first and second output voltages (Vout1 and Vout2of FIG. 6) of each of the first pixel PIXEL1 and the third pixel PIXEL3may be analyzed by the 4-phase algorithm, and thus, the distance betweenthe image sensor 100 and the 3D object 26 may be determined. Likewise,first and second output voltages Vout1 and Vout2 of each of two pixelssuch as a second pixel PIXEL2 and a fourth pixel PIXEL4 in a pixel arraymay be analyzed by the 4-phase algorithm, and thus, a distance betweenthe image sensor 100 and a surface of the 3D object 26 may bedetermined. That is, one piece of distance information may be obtainedfrom two pixels.

Referring to FIG. 9, first and second output voltages Vout1 and Vout2 ofeach of a first pixel PIXEL1 and a third pixel PIXEL3 may be analyzed,and first and second output voltages Vout1 and Vout2 of each of anotherfirst pixel PIXEL1 a and the third pixel PIXEL3 may be analyzed, wherebya distance may be determined. That is, the first and second outputvoltages Vout1 and Vout2 of the third pixel PIXEL3 may be usedsimultaneously with analyzing the first and second output voltages Vout1and Vout2 of the first pixel PIXEL1 and may be used simultaneously withanalyzing the first and second output voltages Vout1 and Vout2 of theother first pixel PIXEL1 a. Also, the other first pixel PIXEL1 a may beused along with analyzing another third pixel PIXEL3 a as well asanalyzing the third pixel PIXEL3. Likewise, a fourth pixel PIXEL4 may beused along with analyzing the second pixel PIXEL2 and another secondpixel PIXEL2 a, and the other second pixel PIXEL2 a may be used alongwith analyzing another fourth pixel PIXEL4 a.

Therefore, considering a whole pixel array, one piece of distanceinformation may be obtained from one pixel, and thus, a resolution ofdistance information may increase.

FIG. 10 is an equivalent circuit diagram corresponding to a unit pixelof an image sensor 100A according to some example embodiments. FIG. 11is a plan view of a main portion of a unit pixel of the image sensor100A according to some example embodiments. FIG. 12 is a cross-sectionalview of a main portion of a unit pixel of the image sensor 100Aaccording to some example embodiments.

Referring to FIGS. 10 to 12, the image sensor 100A may have a 1-tappixel structure. The 1-tap pixel structure may denote a structure whereone pixel of the image sensor 100A includes one tap. The image sensor100A may include a first tap part TAP1, and by using the first tap partTAP1, transmission may be performed based on each of a 0-degree phase, a90-degree phase, a 180-degree phase, and a 270-degree phase.

In a plan view, a first storage gate SG1 may be on one side of a firstvertical transmission gate (TG1) 144, and a tap transmission gate TGXmay be disposed between the first storage gate SG1 and a floatingdiffusion region FD. The floating diffusion region FD may be connectedto a reset gate RG, and a drain of the reset gate RG may be connected toa Vdd voltage. Also, a source and a drain of a source followertransistor SF may be respectively connected to a source of a selectiontransistor SEL and the Vdd voltage. A first output voltage Vout may beoutput to a drain of the selection transistor SEL.

An impurity region 178 may be disposed in a well region 120 disposed onone side of a second vertical transmission gate (TG2) 154. The Vddvoltage may be connected to the impurity region 178. For example, thesecond vertical transmission gate (TG2) 154 may function as an overflowgate for discharging and removing an overflow charge which occurs due toundesired external light in a process of reading and outputting a lightsignal.

In the image sensor 100A according to some example embodiments, a gateTG1 of a transmission transistor TS1 and a gate TG2 of a transmissiontransistor TS2 may be provided relatively long, and an area of the firststorage gate SG1 may be provided relatively large. Accordingly, eachpixel configuring the image sensor 100A may be miniaturized, and readnoise may be minimized.

FIG. 13 is a timing diagram for describing an operation of an imagesensor for distance measurement, according to some example embodiments.FIG. 14 is a plan view of a pixel array of an image sensor according tosome example embodiments. FIG. 15 is a plan view of a pixel array fordescribing an operation of an image sensor for distance measurement,according to some example embodiments.

Referring to FIG. 13, output light from a light source (see of FIG. 2)and reflection light which is reflected by a 3D object (26 of FIG. 2)and received by an image sensor (100A of FIG. 11) may have a delay timeTd. The output light may be a pulse light signal based on a pulsevoltage. A pulse voltage synchronized with the pulse light signal, apulse voltage having a 90-degree phase difference with the pulse lightsignal, a pulse voltage having a 180-degree phase difference with thepulse light signal, and a pulse voltage having a 270-degree phasedifference with the pulse light signal may be sequentially applied as afirst modulation voltage Vmod1 to a first vertical transmission gate(TG1 of FIG. 12), and thus, first vertical voltages Vout generated for atime T3 for which a pulse signal of the reflection light overlaps apulse voltage of the first vertical transmission gate TG1 may beanalyzed by the 4-phase algorithm, whereby a distance between the imagesensor 100A and the 3D object 26 may be determined. The first outputvoltages Vout may be represented by a sum of a plurality of reflectionlight pulse signals as well as a single reflection light pulse signal. Asecond modulation voltage Vmod2 applied to a second verticaltransmission gate (TG2 of FIG. 11) may be a pulse voltage having a180-degree phase difference with the first modulation voltage Vmod1.

In some embodiments, a pulse voltage synchronized with the pulse lightsignal and a pulse voltage having a 180-degree phase with the pulselight signal may be sequentially applied as the first modulation voltageVmod1 to the first vertical transmission gate TG1, and thus, firstoutput voltages Vout generated for the time T3 for which the pulsesignal of the reflection light overlaps the pulse voltage of the firstvertical transmission gate TG1 may be analyzed by the 2-phase algorithm,whereby the distance between the image sensor 100A and the 3D object 26may be determined. The first output voltages Vout may be represented bya sum of a plurality of reflection light pulse signals as well as asingle reflection light pulse signal.

Referring to FIGS. 14 and 15, reflection light having a 0-degree phasemay be collected in a first pixel PIXEL1, reflection light having a90-degree phase may be collected in a second pixel PIXEL2, reflectionlight having a 180-degree phase may be collected in a third pixelPIXEL3, and reflection light having a 270-degree phase may be collectedin a fourth pixel PIXEL4. In this case, a first output voltage (Vout ofFIG. 13) of each of the first to fourth pixels PIXEL1 to PIXEL4 may beanalyzed by the 4-phase algorithm, and thus, the distance between theimage sensor 100A and the 3D object 26 may be determined. That is, onepiece of distance information may be obtained from four pixels.

Although not shown, similarly to description given above with referenceto FIG. 9, a first output voltage (Vout of FIG. 13) of each of fouradjacent pixels such as PIXEL1, PIXEL2, PIXEL3, and PIXEL4, or PIXEL1 a(see FIG. 9), PIXEL2 a (see FIG. 9), PIXEL3, and PIXEL4 may be analyzedby the 4-phase algorithm, and thus, the distance between the imagesensor 100A and the 3D object 26 may be determined. That is, one pieceof distance information may be obtained from one pixel.

FIG. 16 is an equivalent circuit diagram corresponding to a unit pixelof an image sensor 100B according to some example embodiments. FIG. 17is a plan view of a main portion of a unit pixel of the image sensor100B according to some example embodiments.

Referring to FIGS. 16 and 17, the image sensor 100B may have a 4-tappixel structure. One pixel of the image sensor 100B may include a firsttap part TAP1, a second tap part TAP2, a third tap part TAP3, and afourth tap part TAP4, and by using the first to fourth tap parts TAP1 toTAP4, transmission may be performed based on all phases of a 0-degreephase, a 90-degree phase, a 180-degree phase, and a 270-degree phase.

A demodulation region 122 may be disposed between a first verticaltransmission gate TGA, a second vertical transmission gate TGB, a thirdvertical transmission gate TGC, and a fourth vertical transmission gateTGD which are spaced apart from one another. The first tap part TAP1 mayinclude a storage gate SG, a tap transmission gate TGX, a recess gateRG, a selection transistor SEL, and a source follower SF which aredisposed adjacent to the first vertical transmission gate TGA. Atransmission gate insulation layer TG1 may be disposed between the firstvertical transmission gate TGA and a well region 120 (see FIG. 5). Thesecond to fourth vertical transmission gates TGB, TGC, and TGD, togetherwith a storage gate SG, a tap transmission gate TGX, a recess gate RG, aselection transistor SEL, and a source follower SF which are disposedadjacent thereto, may be included in the second to fourth tap parts TAP2to TAP4, respectively.

In some example embodiments, the image sensor 100B may have the 4-tappixel structure, and thus, by performing sensing once, transmission maybe performed on all phases of a 0-degree phase, a 90-degree phase, a180-degree phase, and a 270-degree phase, whereby the image sensor 100Bmay operate at a high speed. Also, the vertical transmission gates TGA,TGB, TGC, and TGD may be provided relatively long, and an area of thestorage gate SG may be provided relatively large. Accordingly, eachpixel configuring the image sensor 100B may be miniaturized, and readnoise may be minimized.

FIG. 18 is a cross-sectional view of a main portion of a unit pixel ofan image sensor 100C according to some example embodiments.

Referring to FIG. 18, the image sensor 100C may further include astorage diffusion region 188 in an inner portion of the semiconductorsubstrate 110, such that at least the semiconductor substrate 110isolates the storage diffusion region 188 from the first and secondsurface 110F and 110B, and where the storage diffusion region 188 isdisposed on (e.g., “under”) storage gates SG1 and SG2 and in a regionadjacent to a first surface 110F of a semiconductor substrate 110, suchthat the storage diffusion region 188 is between the first surface 110Fand the barrier impurity region 176. As shown in FIG. 18, the barrierimpurity region 176 may be in an inner portion of the semiconductorsubstrate 110, such that at least the semiconductor substrate 110isolates the storage diffusion region 188 from the first and secondsurface 110F and 110B. The storage diffusion region 188 may be of (“maybe associated with”) the second conductivity type. The secondconductivity type may be different from the first conductivity type withwhich the barrier impurity region 176 is associated. For example, thefirst conductivity type may be a p-type and the second conductivity typemay be an n type. For example, as shown in FIG. 18, the storagediffusion region 188 may be disposed to overlap a barrier impurityregion 176 in a thickness direction of the semiconductor substrate 110.For example, the storage diffusion region 188 may function as a portionof a storage diode along with the barrier impurity region 176.

For example, the image sensor 100C may read and output a light signal,based on the global shutter manner. In this case, all pixels of theimage sensor 100C may be simultaneously reset, light signals may beaccumulated, and pixel information may be sequentially read by units ofrows. In a case where the storage gates SG1 and SG2 is in a holdingprocess between a light signal accumulating process and a pixelinformation reading process, there is a problem where an undesired darkcurrent occurs when high voltages Vsg1 and Vsg2 are applied to thestorage gates SG1 and SG2. Also, when a low voltage is applied forsolving the problem, a charge storage capacity may be reduced. On theother hand, in some example embodiments, the occurrence of a darkcurrent in a holding mode may be prevented by the storage diffusionregion 188 under the storage gates SG1 and SG2. Accordingly, regardlessof the voltages Vsg1 and Vsg2 applied to the storage gates SG1 and SG2,a full well capacity of the image sensor 100C may be secured.

The image sensor 100C may further include an isolation structure 190between two adjacent pixels of a plurality of pixels. The isolationstructure 190 may extend in a direction from a second surface 110B tothe first surface 110F of the semiconductor substrate 110 and may bedisposed to surround a photoelectric conversion region 130. For example,the isolation structure 190 may include an insulating material such asoxide, nitride, or oxynitride. In some example embodiments, theisolation structure 190 may include a buried layer 190C and a separationinsulation layer 1901 surrounding a sidewall of the buried layer 190C.For example, the buried layer 190C may include polysilicon, a metal, ametal nitride, or an oxide such as SiO₂, and the separation isolationlayer 1901 may include an oxide, a nitride, an oxynitride, or acombination thereof.

The image sensor 100C may further include a plurality of concave-convexstructures 192 which protrude in a direction from the second surface110B to the inside of the semiconductor substrate 110. Each of theplurality of concave-convex structures 192 may include a scatteringinducing layer 192C and an insulation layer 1921 surrounding a sidewalland a bottom surface of the scattering inducing layer 192C. A negativefixed charge layer 182 may be disposed on the second surface 110B tocover the plurality of concave-convex structures 192. For example, thescattering inducing layer 192C may include a dielectric material, anoxide, or a nitride each having a refractive index differing from thatof a substrate. In another structure differing from the plurality ofconcave-convex structures 192 and a method of forming the otherstructure, the insulation layer 1921 may include the same material asthat of the negative fixed charge layer 182, and the insulation layer1921 and the negative fixed charge layer 182 may be simultaneouslyformed after forming a trench, and moreover, may be formed by fillingthe scattering inducing layer 192C.

FIG. 19 is a cross-sectional view of a main portion of a unit pixel ofan image sensor 100D according to some example embodiments.

Referring to FIG. 19, the image sensor 100D may include a first verticaltransmission gate (TG1) 144 and a second vertical transmission gate(TG2) 154 which each extend relatively long in a direction from a wellregion 120 to a second surface 110B of a semiconductor substrate 110. Ademodulation region 122 between the first vertical transmission gate(TG1) 144 and the second vertical transmission gate (TG2) 154 may be animpurity region of a p type. The demodulation region 122 may extend in athickness direction of the semiconductor substrate 110 over a totallength of the first vertical transmission gate (TG1) 144 and the secondvertical transmission gate (TG2) 154.

In the image sensor 100D according to some example embodiments, thefirst vertical transmission gate (TG1) 144 and the second verticaltransmission gate (TG2) 154 may be provided relatively long, and an areaof each of storage gates SG1 and SG2 may be provided relatively large.Accordingly, each pixel configuring the image sensor 100D may beminiaturized, and read noise may be minimized.

FIG. 20 is a cross-sectional view of a main portion of a unit pixel ofan image sensor 100E according to some example embodiments.

Referring to FIG. 20, the image sensor 100E may further include anisolation structure 190A between two adjacent pixels of a plurality ofpixels. The isolation structure 190A may extend over a total length of asemiconductor substrate 110 in a direction from a first surface 110F toa second surface 110B of the semiconductor substrate 110. The isolationstructure 190A may pass through the semiconductor substrate 110 and mayelectrically and physically separate one pixel from an adjacent pixel.The isolation structure 190A may include a buried layer 190C and aseparation insulation layer 1901 surrounding a sidewall of the buriedlayer 190C. The buried layer 190C and the separation insulation layer1901 may extend in a direction from the first surface 110F to the secondsurface 110B of the semiconductor substrate 110. In some exampleembodiments, the buried layer 190C may include polysilicon, a metal, ora metal nitride, and the separation isolation layer 1901 may include anoxide, a nitride, an oxynitride, or a combination thereof.

The isolation structure 190A may include the buried layer 190C includingan insulating material and the separation insulation layer 1901 whichsurrounds a sidewall of the buried layer 190C and includes a high-kdielectric material.

FIG. 21 is a cross-sectional view of a main portion of a unit pixel ofan image sensor 100F according to some example embodiments.

Referring to FIG. 21, the image sensor 100F may include a first barrierimpurity region 176A and a second barrier impurity region 176B which aredisposed apart from each other (“isolated from direct contact with eachother”) in a thickness direction of a semiconductor substrate 110 (e.g.,the direction extending perpendicular to at least one of the firstsurface 110F and the second surface 110B), in the semiconductorsubstrate 110 under a plurality of storage gates SG1 and SG2. An opticalshield region 194 may be disposed between the first barrier impurityregion 176A and the second barrier impurity region 176B. For example,the optical shield region 194 may include an insulating material such assilicon oxide. For example, the optical shield region 194 may be aregion into which oxygen ions are inserted at a high concentration. Theoptical shield region 194 may prevent photocharges from occurring in thefirst barrier impurity region 176A and a storage diffusion region 188due to undesired external light.

FIG. 22 is a cross-sectional view of a main portion of a unit pixel ofan image sensor 100G according to some example embodiments.

Referring to FIG. 22, the image sensor 100G may further include apolarization region 196 disposed on a negative fixed charge layer 182.For example, the polarization region 196 may have a 0-degreepolarization component, a 45-degree polarization component, a 90-degreepolarization component, and a 135-degree polarization component, and thepolarization region 196 having the 0, 45, 90, and 135-degreepolarization components may be disposed in four pixels arranged at a 2×2array. Depth information about a target object may be detected by apixel of the image sensor 100G, and surface shape information about thetarget object may be further detected by the polarization region 196.

In some example embodiments, the polarization region 196 may include aplurality of concave-convex structures which are repeatedly disposed.For example, the polarization region 196 may include the plurality ofconcave-convex structures including a metal material or a dielectricmaterial, but is not limited thereto. Although not shown, each of theplurality of concave-convex structures may be provided as a structurewhich includes a plurality of recesses (not shown) formed by removing aportion of a second surface 110B of the semiconductor substrate 110 anda buried layer (not shown) which is filled into the plurality ofrecesses and has a refractive index differing from that of thesemiconductor substrate 110.

FIG. 23 is an equivalent circuit diagram corresponding to a unit pixelof an image sensor 100H according to some example embodiments. FIG. 24is a plan view of a main portion of a unit pixel of the image sensor100H according to some example embodiments. FIG. 25 is a cross-sectionalview of a main portion of a unit pixel of the image sensor 100Haccording to some example embodiments.

Referring to FIGS. 23 to 25, the image sensor 100H may have a 4-tappixel structure. One pixel of the image sensor 100H may include a firsttap part TAP1, a second tap part TAP2, a third tap part TAP3, and afourth tap part TAP4, and by using the first to fourth tap parts TAP1 toTAP4, transmission may be performed based on all phases of a 0-degreephase, a 90-degree phase, a 180-degree phase, and a 270-degree phase.

The image sensor 100H may include at least one vertical transmissiongate TG, at least one storage gate SG, and at least one verticaloverflow gate OG. In a plan view, first to fourth vertical transmissiongates TGA, TGB, TGC, and TGD may be disposed apart from one another witha demodulation region 122 therebetween. For example, a middle taptransmission gate TGY (e.g., a third tap transmission gate) may bedisposed adjacent to a sidewall of the first vertical transmission gateTGA opposite to the demodulation region 122, and a vertical storage gateSG (e.g., a first storage gate) may be disposed on one side of themiddle tap transmission gate TGY, such that, as shown in at least FIG.24, the middle tap transmission gate TGY is on the first surface 110Fand is between the vertical storage gate SG and the first verticaltransmission gate TGA. In another example, a separate middle taptransmission gate TGY (e.g., a fourth tap transmission gate) may bedisposed adjacent to a sidewall of the second vertical transmission gateTGB opposite to the demodulation region 122, and a separate verticalstorage gate SG (e.g., a second storage gate) may be disposed on oneside of the separate middle tap transmission gate TGY, such that, asshown in at least FIG. 24, the separate middle tap transmission gate TGYis on the first surface 110F and is between the separate verticalstorage gate SG and the second vertical transmission gate TGB. Thevertical storage gates SG (e.g., first and second storage gates) mayextend in a direction from a first surface 110F toward a second surface110B of the semiconductor substrate 110, and a storage gate insulationlayer SG1 may surround a sidewall and a bottom surface of the verticalstorage gate SG. Restated, and as shown in FIG. 25, a storage gate SG(e.g., first storage gate) may extend in the thickness direction of thesemiconductor substrate 110, from the first surface 110F, to extendthrough at least a portion of the well region 120. Another storage gateSG (e.g., second storage gate) may extend in the thickness direction ofthe semiconductor substrate 110, from the first surface 110F, to extendthrough at least a portion of the well region 120.

A barrier impurity region 176 which conforms to a shape of each of thesidewall and the bottom surface of the vertical storage gate SG and isdisposed apart from the vertical storage gate SG may be disposed in awell region 120. Restated, and as shown in FIG. 25, the semiconductorsubstrate 110 may be include a barrier impurity region 176 on a firststorage gate (e.g., storage gate SG) and may be isolated from directcontact with the sidewall and bottom surface of the first storage gate(e.g., sidewall SG_W and bottom surface SG_B). A charge storage region1721 may be disposed in the well region 120 between the barrier impurityregion 176 and the vertical storage gate SG. The charge storage region1721 may be a temporary charge storage region which temporarily storesphotocharges generated in the photoelectric conversion region 130 beforebeing transferred to a floating diffusion region FD after beingtransferred to the demodulation region 122. A tap transmission gate TGXmay be disposed between the vertical storage gate SG and the floatingdiffusion region FD. As illustrated in FIG. 23, a transmissiontransistor TSA, a middle tap transmission transistor TXS1, a storagetransistor SS1, and a tap transmission transistor TYS1 may besequentially disposed and may extend to the floating diffusion regionFD.

A vertical overflow gate OG may be disposed in one side of thedemodulation region 122 between the first and second verticaltransmission gates TGA and TGB. The vertical overflow gate OG may extendin the direction from the first surface 110F to the second surface 110Bof the semiconductor substrate 110, and an overflow gate insulationlayer OG1 may surround a sidewall and a bottom surface of the verticaloverflow gate OG. The vertical overflow gate OG may be provided to havea length similar to that of the vertical storage gate SG, but is notlimited thereto.

The image sensor 100H according to some example embodiments may includethe first to fourth vertical transmission gates TGA, TGB, TGC, and TGD,the vertical storage gate SG, and the vertical overflow gate OG, and alength of each of the first to fourth vertical transmission gates TGA,TGB, TGC, and TGD, the vertical storage gate SG, and the verticaloverflow gate OG may be relatively long set. Accordingly, each pixelconfiguring the image sensor 100H may be miniaturized, a charge storagecapacity may increase, and read noise may be minimized.

While the inventive concepts have been particularly shown and describedwith reference to embodiments thereof, it will be understood thatvarious changes in form and details may be made therein withoutdeparting from the spirit and scope of the following claims.

What is claimed is:
 1. An image sensor, comprising: a semiconductorsubstrate including a first surface and a second surface, thesemiconductor substrate further including a well region and a firstfloating diffusion region, each of the well region and the firstfloating diffusion region adjacent to the first surface; a firstvertical transmission gate and a second vertical transmission gateisolated from direct contact with each other, the first verticaltransmission gate and the second vertical transmission gate eachextending from the first surface of the semiconductor substrate and in athickness direction of the semiconductor substrate through at least aportion of the well region, the thickness direction being perpendicularto at least one of the first surface and the second surface; a firststorage gate between the first vertical transmission gate and the firstfloating diffusion region, the first storage gate on the first surfaceof the semiconductor substrate; and a first tap transmission gatebetween the first storage gate and the first floating diffusion region,the first tap transmission gate on the first surface of thesemiconductor substrate.
 2. The image sensor of claim 1, wherein thefirst tap transmission gate is a transistor gate of a first taptransmission transistor, and the first tap transmission transistor isconfigured to transfer a photocharge that is stored in a first chargestorage region on the first storage gate to the first floating diffusionregion.
 3. The image sensor of claim 1, wherein the semiconductorsubstrate further includes a second floating diffusion region, thesecond floating diffusion region adjacent to the first surface, and theimage sensor further includes a second storage gate between the secondvertical transmission gate and the second floating diffusion region, thesecond storage gate on the first surface of the semiconductor substrate,and a second tap transmission gate between the second storage gate andthe second floating diffusion region, the second tap transmission gateon the first surface of the semiconductor substrate.
 4. The image sensorof claim 1, further comprising: a gate insulation layer on the firstsurface of the semiconductor substrate, wherein the first storage gateis on the gate insulation layer, and a bottom surface of the firststorage gate is distal to the second surface of the second surface ofthe semiconductor substrate in relation to the first surface of thesemiconductor substrate.
 5. The image sensor of claim 1, wherein asurface area of the first storage gate along a surface parallel to thefirst surface of the semiconductor substrate is greater than a surfacearea of the first vertical transmission gate along the surface parallelto the first surface of the semiconductor substrate.
 6. The image sensorof claim 1, wherein the semiconductor substrate includes a demodulationregion between the first vertical transmission gate and the secondvertical transmission gate in a direction parallel to the first surfaceof the semiconductor substrate; and a barrier impurity region on thefirst storage gate and isolated from direct contact with the firstsurface of the semiconductor substrate, the barrier impurity regionassociated with a first conductivity type.
 7. The image sensor of claim6, further comprising: an overflow gate on the first surface of thesemiconductor substrate, the overflow gate connected to one side of thedemodulation region.
 8. The image sensor of claim 6, wherein thesemiconductor substrate further includes a storage diffusion regionbetween the first surface of the semiconductor substrate and the barrierimpurity region, the storage diffusion region associated with a secondconductivity type, the second conductivity type different from the firstconductivity type.
 9. The image sensor of claim 6, wherein the barrierimpurity region includes a first barrier impurity region and a secondbarrier impurity region, the first barrier impurity region and thesecond barrier impurity region isolated from direct contact with eachother in the thickness direction of the semiconductor substrate, and theimage sensor further includes an optical shield region between the firstbarrier impurity region and the second barrier impurity region.
 10. Theimage sensor of claim 1, wherein the first storage gate extends in thethickness direction of the semiconductor substrate from the firstsurface of the semiconductor substrate to extend through at least aseparate portion of the well region.
 11. The image sensor of claim 10,wherein the semiconductor substrate further includes a barrier impurityregion on the first storage gate and isolated from direct contact with asidewall and a bottom surface of the first storage gate, the barrierimpurity region associated with a first conductivity type.
 12. The imagesensor of claim 10, further comprising: a third tap transmission gatebetween the first storage gate and the first vertical transmission gateand on the first surface of the semiconductor substrate.
 13. An imagesensor, comprising: a semiconductor substrate including a first surfaceand a second surface, the semiconductor substrate further including ademodulation region; a first vertical transmission gate and a secondvertical transmission gate isolated from direct contact with each other,the demodulation region between the first vertical transmission gate andthe second vertical transmission gate, the first vertical transmissiongate and the second vertical transmission gate each extending in athickness direction of the semiconductor substrate from the firstsurface of the semiconductor substrate, the thickness direction beingperpendicular to at least one of the first surface and the secondsurface; a first storage gate and a second storage gate on the firstsurface of the semiconductor substrate, the first storage gate adjacentto the first vertical transmission gate, the second storage gateadjacent to the second vertical transmission gate; and a first taptransmission gate and a second tap transmission gate on the firstsurface of the semiconductor substrate, the first tap transmission gateadjacent to the first storage gate, the second tap transmission gateadjacent to the second storage gate.
 14. The image sensor of claim 13,wherein the semiconductor substrate further includes a first floatingdiffusion region and a second floating diffusion region each adjacent tothe first surface of the semiconductor substrate, the first taptransmission gate is between the first floating diffusion region and thefirst storage gate, and the second tap transmission gate is between thesecond floating diffusion region and the second storage gate.
 15. Theimage sensor of claim 13, wherein a surface area of the first storagegate along a surface parallel to the first surface of the semiconductorsubstrate is greater than a surface area of the first verticaltransmission gate along the surface parallel to the first surface of thesemiconductor substrate, and a surface area of the second storage gatealong the surface parallel to the first surface of the semiconductorsubstrate is greater than a surface area of the second verticaltransmission gate along the surface parallel to the first surface of thesemiconductor substrate.
 16. The image sensor of claim 13, wherein thesemiconductor substrate further includes a well region, the well regionadjacent to the first surface, and the image sensor further includes athird tap transmission gate between the first storage gate and the firstvertical transmission gate and on the first surface of the semiconductorsubstrate, and a fourth tap transmission gate between the second storagegate and the second vertical transmission gate and on the first surfaceof the semiconductor substrate, wherein the first storage gate and thesecond storage gate extend in the thickness direction of thesemiconductor substrate from the first surface of the semiconductorsubstrate to extend through at least a portion of the well region. 17.The image sensor of claim 16, wherein the semiconductor substratefurther includes a barrier impurity region on the first storage gate andisolated from direct contact with a sidewall and a bottom surface of thefirst storage gate, the barrier impurity region associated with a firstconductivity type.
 18. An image sensor, comprising: a semiconductorsubstrate including a first surface and a second surface, thesemiconductor substrate further include a demodulation region and afirst floating diffusion region, the semiconductor substrate associatedwith a first conductivity type; a first vertical transmission gate and asecond vertical transmission gate isolated from direct contact with eachother, the demodulation region between the first vertical transmissiongate and the second vertical transmission gate, the first verticaltransmission gate and the second vertical transmission gate eachextending in a thickness direction of the semiconductor substrate fromthe first surface of the semiconductor substrate, the thicknessdirection being perpendicular to at least one of the first surface andthe second surface; a first storage gate between the first verticaltransmission gate and the first floating diffusion region, the firststorage gate on the first surface of the semiconductor substrate; afirst tap transmission gate between the first storage gate and the firstfloating diffusion region, the first tap transmission gate on the firstsurface of the semiconductor substrate; and a storage diffusion regionin an inner portion of the semiconductor substrate, the storagediffusion region on the first storage gate, the storage diffusion regionassociated with a second conductivity type, the second conductivity typedifferent from the first conductivity type.
 19. The image sensor ofclaim 18, further comprising: a barrier impurity region in the innerportion of the semiconductor substrate, the barrier impurity region onthe first storage gate, the barrier impurity region associated with thefirst conductivity type, the barrier impurity region adjacent to thestorage diffusion region.
 20. The image sensor of claim 19, wherein thebarrier impurity region overlaps the first storage gate in the thicknessdirection of the semiconductor substrate.